Concept of Double Peak electric field distribution in the development of radiation hard silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 583, Issue 1, 2007, Pages 77-86

  Verbitskaya, E ^a   Eremin, V ^a   Li, Z ^b   Harkonen J ^c   Bruzzi, M ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c CERN   (Switzerland)

^d UNIVERSITY OF FLORENCE   (Italy)

Author keywords

Carrier trapping; Charge collection efficiency; Electric field distribution; Radiation hardness; Silicon detectors

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; IRRADIATION; RADIATION HARDENING;

CARRIER TRAPPING; CHARGE COLLECTION EFFICIENCY; ELECTRIC FIELD DISTRIBUTION;

SILICON DETECTORS;

EID: 36448958009     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.228     Document Type: Article

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