First double-sided 3-D detectors fabricated at CNM-IMB

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 592, Issue 1-2, 2008, Pages 38-43

  Pellegrini, G ^a   Lozano, M ^a   Ullan M ^a   Bates, R ^b   Fleta, C ^b   Pennicard, D ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

3 D detectors; Microstrip detectors; Radiation hardness; Super LHC

Indexed keywords

DETECTORS; ELECTRODES; METALLIZING; PAPER; SILICON; SILICON DETECTORS; THREE DIMENSIONAL;

3-D DETECTORS; CATHODE CONTACTS; CATHODE ELECTRODES; DETECTOR CONFIGURATION; ELECTRICAL MEASUREMENTS; ELECTRICAL SIMULATIONS; ELECTRODE SPACINGS; ELSEVIER (CO); FABRICATION PROCESSES; SILICON RADIATION DETECTORS; THREE DIMENSIONAL (3D);

RADIATION DETECTORS;

ASSEMBLY; DETECTORS; ELECTRICAL PROPERTIES; ELECTRODES; ELECTROMAGNETIC RADIATION; METALIZATION; PARTICLE COLLISIONS; SILICON; SUBSTRATES;

EID: 45449115919     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.03.119     Document Type: Review

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