Large electric polarization and exchange bias in multiferroic BiFeO 3

Advanced Materials

Volumn 18, Issue 11, 2006, Pages 1445-1448

  Dho, Joonghoe ^a   Qi, Xiaoding ^a   Kim, Hyunho ^a,b   MacManus Driscoll, Judith L ^a   Blamire, Mark G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; DEPOSITION; FERROELECTRIC MATERIALS; IRON COMPOUNDS; POLARIZATION; THIN FILMS;

ANTIFERROMAGNETIC LAYERS; COERCIVE FIELD; HIGH-QUALITY THIN FILMS; SPIN-VALVE STRUCTURE;

BISMUTH COMPOUNDS;

EID: 33745160011     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200502622     Document Type: Article

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