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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Variation of leakage current mechanisms by ion substitution in BiFeO 3 thin films

(2) Zhong, Zhiyong a Ishiwara, Hiroshi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BFO FILMS; CHEMICAL SOLUTION DEPOSITION; CRYSTALLIZATION TEMPERATURE; DENSITY OF TRAP STATE; ION SUBSTITUTION; OHMIC CONDUCTION; POOLE-FRENKEL EMISSION; SPACE-CHARGE-LIMITED; TRANSIENT EFFECT;

MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTING BISMUTH COMPOUNDS;

LEAKAGE CURRENTS;

EID: 70349488343 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3231073 Document Type: Article

Times cited : (96)

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