The inlaid AI2O3 tunnel switch for ultrathin ferroelectric films

Advanced Materials

Volumn 21, Issue 28, 2009, Pages 2870-2875

  Jiang, Quan ^c   Lee, Hyun Ju ^a,b   Kim, Gun Hwan ^a,b   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; DIELECTRIC LAYER; POLYCRYSTALLINE PZT FILMS; PZT; PZT FILM; SPECIFIC INTERACTION; THIN DIELECTRIC LAYER; ULTRA-THIN; ULTRATHIN FE FILMS; ULTRATHIN FERROELECTRIC FILMS;

ALUMINUM; FERROELECTRICITY; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS; TUNNELS; ULTRATHIN FILMS; WIND TUNNELS;

FERROELECTRIC FILMS;

EID: 68149094487     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200802924     Document Type: Article

References (26)

1. U. Bottger, S. R. Scott, in Nanoelectronics and Information Technology (Ed.: R. Waser), Wiley-VCH, Weinheim, Germany 2003, Ch. 22.
2. J. F. Scott, Ferroelectric Memories, Springer, Heidelberg, Germany 2000.
3. H. Kohlstedt, H. ishiwara, in Nanoelectronics and Information Technology (Ed.: R. Waser), Wiley-VCH, Weinheim, Germany 2003, Ch. 14.
4. J. Ricote, S. Holgado, P. Ramos, M. L Calzada, IEEE Trans. Ultrason. Ferroelect. Freq. Control 2006, 53, 2299.
5. J. Junquera, P. Ghosez, Nature 2003, 422, 506.
6. D. D. Fong, G. B. Stephenson, S. K. Streiffer, J. A. Eastman, O. Auciello, P. H. Fuoss, C. Thompson, Science 2004, 304, 1650.
7. C. T. Black, J. J. Weiser, IEEE Trans. Electron Devices 1999, 46, 776.
8. M. Stengel, N. A. Spaldin, Nature 2006, 443, 679.
9. G. Gerra, A. K. Tagantsev, N. Setter, K. Parlinski, Phys. Rev. Lett. 2006, 96, 107603.
10. C. S. Hwang, J. Appl. Phys. 2002, 92, 432.
11. A. Q. Jiang, Y. Y. Lin, T. A. Tang, J. Appl. Phys. 2007, 101, 056103.
12. P. Zubko, D. J. Jung, J. F. Scott, J. Appl. Phys. 2006, 100, 114112.
13. P. Zubko, D. J. Jung, J. F. Scott, J. Appl. Phys. 2006, 100, 114113.
14. L. J. Sinnamon, M. M. Saad, R. M. Bowman, J. M. Gregg, Appl. Phys. Lett. 2002, 81, 703.
15. V. Nagarajan, A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao, L. Chen, J. Melngailis, O. Auciello, R. Ramesh, Nat. Mater. 2003, 2, 43.
16. A. M. Bratkovsky, A. P. Levanyuk, Phys. Rev. B 2002, 65, 094102.
17. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, R. Waser, J. Appl. Phys. 2002, 92, 2680.
18. A. Q. Jiang, Y. Y. Lin, T. A. Tang, Appl. Phys. Lett. 2007, 91, 082901.
19. A. K. Tagantsev, M. Landivar, E. Colla, N. Setter, J. Appl. Phys. 1995, 78, 2623.
20. A. Q. Jiang, Y. Y. Lin, T. A. Tang, J. Appl. Phys. 2007, 101, 104105.
21. H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, T. Ohno, Phys. Rev. B 2006, 73, 054108.
22. A. Q. Jiang, Y. Y. Lin, T. A. Tang, Appl. Phys. Lett. 2007, 91, 202906.
23. K. J. Choi, M. Biegalski, Y. L Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L.-Q. Chen, D. G. Schlom, C. B. Eom, Science 2004, 306, 1005.
24. J. F. Scott, M. Azuma, C. A. Paz de Araujo, L. D. McMillan, M. C. Scott, T. Roberts, Integr. Ferroelectr. 1994, 4, 61.
25. I. Stolichnov, A. Tagantsev, E. Colla, S. Gentil, S. Hiboux, J. Baborowski, P. Murait, N. Setter, J. Appl. Phys. 2000, 88, 2154.
26. T. Nakamura, Y. Nakao, A. Kamisawa, H. Takasu, Appl. Phys. Lett. 1994, 65, 1522.