Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

Applied Physics Letters

Volumn 97, Issue 11, 2010, Pages

  Kumar, S R Sarath ^a   Hedhili, Mohamed Nejib ^a   Alshareef, H N ^a   Kasiviswanathan, S ^b  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ANALYSIS; CHARGE COMPENSATION; CHARGE STATE; CORE LEVELS; ELECTRICAL RESISTIVITY; INDIUM TIN OXIDE FILMS; INDIUM TIN OXIDE THIN FILMS; MN CONCENTRATIONS; MN-DOPED; SATELLITE PEAKS; THREE COMPONENT;

BINDING ENERGY; ELECTRIC CONDUCTIVITY; INDIUM; INDIUM COMPOUNDS; MANGANESE COMPOUNDS; OXIDE FILMS; PHOTOLITHOGRAPHY; TIN; TIN OXIDES; TITANIUM COMPOUNDS;

MANGANESE;

EID: 77956836339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481800     Document Type: Article

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