The influence of various upper electrodes on fatigue properties of perovskite Pb(Zr,Ti)O3 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 5941-5946

  Masuda, Yoichiro ^a   Nozaka, Takashi ^a  

^a HACHINOHE INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical solution deposition; Degradation; Domain pinning; Fatigue; FeRAM; Ferroelectric thin film; Leakage current density; MEMS; Polarization switching; SrRuO3 (SRO) and IrO2; Upper electrodes of platinum(Pt)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; IRIDIUM COMPOUNDS; MAGNETRON SPUTTERING; PLATINUM; POLARIZATION; PULSED LASER DEPOSITION; SEMICONDUCTING LEAD COMPOUNDS; STRONTIUM COMPOUNDS;

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC THIN FILM; FERROELECTRIC THIN FILM CAPACITOR; REMANENT POLARIZATION;

THIN FILMS;

EID: 0344309166     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5941     Document Type: Article

References (20)

1. J. F. Scott: Ferroelectric Memories (Spring-Verlag, Heidelberg, 2000) Springer Series in Advanced Microelectronics Vol. 3.
2. N. Setter: Piezoelectr. Device (2000) April.
3. H. Maiwa and N. Ichinose: Jpn. J. Appl. Phys. 39 (2000) 5403.
4. K. Kakimoto, H. Kakimoto, S. Fujita and Y. Masuda: J. Am. Ceram. Soc. 85 (2002) 1019.
5. K. Maki, N. Soyam, S. Mori and K. Ogi: Jpn. J. Appl. Phys. 39 (2000) 5421.
6. T. Iijima, G.H.Z. Wang, H. Tsuboi, K. Hiyama and M. Okada: Jpn. J. Appl. Phys. 39 (2000) 5426.
7. Y. Takashima, K. Tanaka and Y. Sakabe: Jpn. J. Appl. Phys. 39 (2000) 5389.
8. H. Fujisawa, K. Morimoto, M. Shimizu and H. Niu: Jpn. J. Appl. Phys. 39 (2000) 5446.
9. Y. Fukuda, K. Aoki, K. Numata and A. Nishimura: Jpn. J. Appl. Phys. 33 (1994) 5255.
10. H. Kakemoto, K. Kakimoto, A. Baba, S. Fujita and Y. Masuda: J. Ceram. Soc. Jpn. 109 (2001) 651.
11. Z. J. Wong, K. Kikuchi and R. Maeda: Jpn. J. Appl. Phys. 39 (2000) 5413.
12. T. Nishida, S. Okamura, T. Shiosaki, S. Fujita and Y. Masuda: Jpn. J. Appl. Phys. 38 (1999) 5337.
13. Y. Masuda, S. Fujita, T. Nishida, H. Masumoto and T. Hirai: Proc. 11th IEEE, Switzerland (1998) p. 23.
14. S. K. Hong, H. G. Yang and H. J. Kim: J. Korean Phys. Soc. 32 (1998) 1525.
15. C. H. Kim and M. Lee: Korean Ceram. Soc. Bull. 23 (2002) 741.
16. F. McNall, J. H. Kim and F. F. Lange: J. Mater. Res. 15 (2000) 1546.
17. K. V. Im, B. J. Kuh, S. O. Park, S. I. Lee and W. K. Choo: Jpn. J. Appl. Phys. 39 (2000) 5437.
18. J. F. Scott: Jpn. J. Appl. Phys. 38 (1999) 2272.
19. W. L. Warren, D. Dimons and R. M. Warser: Mat. Res. Soc. Bull. 21 (1996) 40.
20. W. L. Warren, D. Dimons, B. A. Tuttle, G. E. Pike, R. W. Schwartz, P. J. Clews and D. C. MacIntry: J. Appl. Phys. 77 (1995) 6695.