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Japanese Journal of Applied Physics

Volumn 50, Issue 10 PART 1, 2011, Pages

Structural and electrical properties of radio frequency sputtered HfTaOx films for high-k gate insulator

(5) Hota, Mrinal K a,b Mallik, Sandipan a Sarkar, Chandan K b Varma, Shikha c Maiti, Chinmay K a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b JADAVPUR UNIVERSITY (India)

c INSTITUTE OF PHYSICS (India)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHEMICAL COMPOSITIONS; CRYSTALLINITIES; DEPOSITED FILMS; DISSIPATION FACTORS; GRAZING-INCIDENCE X-RAY DIFFRACTION; HIGH-K GATE INSULATOR; INTERFACE TRAP DENSITY; METAL-INSULATOR-METAL STRUCTURES; METAL-OXIDE; MIM STRUCTURE; NON-LINEARITY; RADIO FREQUENCIES; RADIO-FREQUENCY (RF) MAGNETRON; SI SUBSTRATES; SILICON BAND GAP; STRUCTURAL AND ELECTRICAL PROPERTIES; TRAP DISTRIBUTIONS;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC DEVICES; HAFNIUM OXIDES; MAGNETRONS; METAL INSULATOR BOUNDARIES; MOS CAPACITORS; PHOTOELECTRON SPECTROSCOPY; PLATINUM; RADIO; RADIO WAVES; SEMICONDUCTING SILICON; TANTALUM; TANTALUM OXIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MIM DEVICES;

EID: 80054965157 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.101101 Document Type: Article

Times cited : (3)

References (26)

1
- 80054939739
- International Technology Roadmap for Semiconductors (2008) Table RFAMS3 On-Chip Passives Technology Requirements [http://www.itrs.net/Links/2008ITRS/ home2008.html].
- (2008) Table RFAMS3 On-chip Passives Technology Requirements

2
- 38749107585
- S. K. JangJian, Y. L. Wang, M. C. Liao, H. J. Chang, and Y. Juang: J. Phys. Chem. Solids 69 (2008) 747.
- (2008) J. Phys. Chem. Solids , vol.69 , pp. 747
- JangJian, S.K.¹ Wang, Y.L.² Liao, M.C.³ Chang, H.J.⁴ Juang, Y.⁵

3
- 0036932191
- C. H. Ng, K. W. Chew, J. X. Li, T. T. Tjoa, L. N. Goh, and S. F. Chu: IEDM Tech. Dig., 2002, p. 241.
- (2002) IEDM Tech. Dig. , pp. 241
- Ng, C.H.¹ Chew, K.W.² Li, J.X.³ Tjoa, T.T.⁴ Goh, L.N.⁵ Chu, S.F.⁶

4
- 0345815430
- P. Zurcher, P. Alluri, P. Chu, P. Duvallet, C. Happ, R. Henderson, J. Mendonca, M. Kim, M. Petras, M. Raymond, T. Remmel, D. Roberts, B. Steimle, J. Stipanuk, S. Straub, T. Sparks, M. Tarabbia, H. Thibieroz, and M. Miller: IEDM Tech. Dig., 2000, p. 153.
- (2000) IEDM Tech. Dig. , pp. 153
- Zurcher, P.¹ Alluri, P.² Chu, P.³ Duvallet, P.⁴ Happ, C.⁵ Henderson, R.⁶ Mendonca, J.⁷ Kim, M.⁸ Petras, M.⁹ Raymond, M.¹⁰ Remmel, T.¹¹ Roberts, D.¹² Steimle, B.¹³ Stipanuk, J.¹⁴ Straub, S.¹⁵ Sparks, T.¹⁶ Tarabbia, M.¹⁷ Thibieroz, H.¹⁸ Miller, M.¹⁹

5
- 79952483914
- J. Gluch, T. Rößler, S. B. Menzel, and J. Eckert: Microelectron. Eng. 88 (2011) 561.
- (2011) Microelectron. Eng. , vol.88 , pp. 561
- Gluch, J.¹ Rößler, T.² Menzel, S.B.³ Eckert, J.⁴

6
- 0032712098
- B. C. Lai and J. Y. Lee: J. Electrochem. Soc. 146 (1999) 266.
- (1999) J. Electrochem. Soc. , vol.146 , pp. 266
- Lai, B.C.¹ Lee, J.Y.²

7
- 0035982539
- H. Kang, Y. Roh, G. Bae, D. Jung, and C. W. Yang: J. Vac. Sci. Technol. B 20 (2002) 1360.
- (2002) J. Vac. Sci. Technol. B , vol.20 , pp. 1360
- Kang, H.¹ Roh, Y.² Bae, G.³ Jung, D.⁴ Yang, C.W.⁵

8
- 0036508039
- H. P. Wong: IBM J. Res. Dev. 46 (2002) 133.
- (2002) IBM J. Res. Dev. , vol.46 , pp. 133
- Wong, H.P.¹

9
- 0036863349
- W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma: IEEE Electron Device Lett. 23 (2002) 649.
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 649
- Zhu, W.J.¹ Tamagawa, T.² Gibson, M.³ Furukawa, T.⁴ Ma, T.P.⁵

10
- 33748747482
- S. W. Jeong, H. J. Lee, K. S. Kim, M. T. You, Y. Roh, T. Noguchi, W. Xianyu, and J. Jung: Thin Solid Films 515 (2006) 526.
- (2006) Thin Solid Films , vol.515 , pp. 526
- Jeong, S.W.¹ Lee, H.J.² Kim, K.S.³ You, M.T.⁴ Roh, Y.⁵ Noguchi, T.⁶ Xianyu, W.⁷ Jung, J.⁸

11
- 0035872897
- G. D. Wilk, R. M. Wallace, and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

12
- 0346534582
- G. D. Wilk, R. M. Wallace, and J. M. Anthony: J. Appl. Phys. 87 (2000) 484.
- (2000) J. Appl. Phys. , vol.87 , pp. 484
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

13
- 79951969794
- M. K. Hota, C. Mahata, S. Mallik, C. K. Sarkar, and C. K. Maiti: J. Electrochem. Soc. 158 (2011) H44.
- (2011) J. Electrochem. Soc. , vol.158
- Hota, M.K.¹ Mahata, C.² Mallik, S.³ Sarkar, C.K.⁴ Maiti, C.K.⁵

14
- 79956056584
- M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo: Appl. Phys. Lett. 80 (2002) 3183.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3183
- Visokay, M.R.¹ Chambers, J.J.² Rotondaro, A.L.P.³ Shanware, A.⁴ Colombo, L.⁵

15
- 0141786940
- S. H. Bae, C. H. Lee, R. Clark, and D. L. Kwong: IEEE Electron Device Lett. 24 (2003) 556.
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 556
- Bae, S.H.¹ Lee, C.H.² Clark, R.³ Kwong, D.L.⁴

16
- 8344270283
- X. Yu, C. Zhu, M. F. Li, A. Chin, A. Y. Du, W. D. Wang, and D. L. Kwong: Appl. Phys. Lett. 85 (2004) 2893.
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2893
- Yu, X.¹ Zhu, C.² Li, M.F.³ Chin, A.⁴ Du, A.Y.⁵ Wang, W.D.⁶ Kwong, D.L.⁷

17
- 21144477074
- L. Chen and R. W. Hoffman: J. Vac. Sci. Technol. A 11 (1993) 2303.
- (1993) J. Vac. Sci. Technol. A , vol.11 , pp. 2303
- Chen, L.¹ Hoffman, R.W.²

18
- 8644235884
- D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X. D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, B. E. White, and P. Tobin: J. Electrochem. Soc. 151 (2004) F220.
- (2004) J. Electrochem. Soc. , vol.151
- Triyoso, D.¹ Liu, R.² Roan, D.³ Ramon, M.⁴ Edwards, N.V.⁵ Gregory, R.⁶ Werho, D.⁷ Kulik, J.⁸ Tam, G.⁹ Irwin, E.¹⁰ Wang, X.D.¹¹ La, L.B.¹² Hobbs, C.¹³ Garcia, R.¹⁴ Baker, J.¹⁵ White, B.E.¹⁶ Tobin, P.¹⁷

19
- 28444439846
- J. Lu and Y. Kuo: Appl. Phys. Lett. 87 (2005) 232906.
- (2005) Appl. Phys. Lett. , vol.87 , pp. 232906
- Lu, J.¹ Kuo, Y.²

20
- 4544326575
- X. Yu, C. Zhu, X. P. Wang, M. F. Li, A. Chin, A. Y. Du, W. D. Wang, and D. L. Kwong: Symp. VLSI Technology Dig. Tech. Pap. 2004, p. 110.
- (2004) Symp. VLSI Technology Dig. Tech. Pap. , pp. 110
- Yu, X.¹ Zhu, C.² Wang, X.P.³ Li, M.F.⁴ Chin, A.⁵ Du, A.Y.⁶ Wang, W.D.⁷ Kwong, D.L.⁸

21
- 40149094475
- X. B. Lua, K. Maruyama, and H. Ishiwara: J. Appl. Phys. 103 (2008) 044105.
- (2008) J. Appl. Phys. , vol.103 , pp. 044105
- Lua, X.B.¹ Maruyama, K.² Ishiwara, H.³

22
- 0001188528
- L. M. Terman: Solid-State Electron. 5 (1962) 285.
- (1962) Solid-state Electron. , vol.5 , pp. 285
- Terman, L.M.¹

23
- 0019056629
- W. A. Hill and C. C. Coleman: Solid-State Electron. 23 (1980) 987.
- (1980) Solid-state Electron. , vol.23 , pp. 987
- Hill, W.A.¹ Coleman, C.C.²

24
- 77957706116
- M. K. Hota, C. Mahata, M. K. Bera, S. Mallik, C. K. Sarkar, S. Varma, and C. K. Maiti: Thin Solid Films 519 (2010) 423.
- (2010) Thin Solid Films , vol.519 , pp. 423
- Hota, M.K.¹ Mahata, C.² Bera, M.K.³ Mallik, S.⁴ Sarkar, C.K.⁵ Varma, S.⁶ Maiti, C.K.⁷

25
- 0028507419
- K. Abe and S. Komatsu: Jpn. J. Appl. Phys. 33 (1994) 5297.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 5297
- Abe, K.¹ Komatsu, S.²

26
- 0032073125
- C.-M. Hung, Y.-C. Ho, I.-C. Wu, and K. O: IEEE Trans. Microwave Theory Tech. 46 (1998) 505.
- (1998) IEEE Trans. Microwave Theory Tech. , vol.46 , pp. 505
- Hung, C.-M.¹ Ho, Y.-C.² Wu, I.-C.³

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