Mechanism of the metal-insulator-metal capacitance drift for advanced mixed-signal copper process device

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 747-751

  JangJian, Shiu Ko ^a,c   Wang, Ying Lang ^a,c   Liao, Miao Cheng ^a   Chang, Hung Jui ^b   Juang, Yungder ^b  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

A. Semiconductors; B. Vapor deposition

Indexed keywords

CAPACITANCE; CAPACITORS; MIM DEVICES; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

CAPACITANCE DRIFT; PLASMA TREATMENTS; ROOT MEAN SQUARE (RMS);

ELECTRIC INSULATORS;

EID: 38749107585     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.078     Document Type: Article

References (15)

1. International Technology Roadmap for Semiconductors (ITRS), RF & A/MS Technologies for Wireless Chapter, 2004, p. 8.
2. Babcock J.A., Balster S.G., Pinto A., Dirnecker C., Steinmann P., Jumpertz R., and El-Kareh B. IEEE Electron. Device Lett. 22 (2001) 230
3. S. Decoutere, F. Vleugels, R. Kuhn, R. Loo, M. Caymax, S. Jenei, J. Croon, S.V. Huylenbroeck, M.D. Rold, E. Rosseel, P. Chevalier, P. Coppens, in: Proceedings of IEEE Bipolar/BiCMOS Circuits Technology Meeting, 2000, p. 106.
4. Ng C.H., Chew K.W., Li J.X., Tjoa T.T., Goh L.N., and Chu S.F. IEDM Tech. Digest (2002) 241
5. Chiang K.C., Lai C.H., Chin A., Wang T.J., Chiu H.F., Chen J.R., McAlister S.P., and Chi C.C. IEEE Electron. Device Lett. 26 (2005) 728
6. Ng C.H., Chew K.W., and Chu S.F. IEEE Electron. Device Lett. 24 (2003) 506
7. Kim S.J., Cho B.J., Ding S.J., Li M.F., Yu M.B., Zhu C., Chin A., and Kwong D.L. VLSI Tech. Digest (2004) 218
8. Armacost M., Augustin A., Felsner P., Feng Y., Friese G., and Heidenreich J. IEDM Tech. Digest (2000) 157
9. Liu R.C., Lin C.Y., Harris E., Merchant S., Downey S.W., and Weber G. IITC Proc. (2000) 111
10. Ng C.H., and Chu S.F. IEEE Electron. Device Lett. 23 (2002) 529
11. Tu Y.L., Lin H.L., Chao L.L., Wu D., Tsai C.S., Wang C., Huang C.F., Lin C.h., and Sun J. VLSI Tech. Digest (2003) 79
12. Suh Y.S., Heuss G.P., Misra V., Park D.G., and Lim K.Y. J. Electrochem. Soc. 150 (2003) F79
13. Lee E.M., Shin W.C., Choi Y.S., and Yoon S.G. J. Electrochem. Soc. 150 (2001) G611
14. Lee J.S., Chang S.J., Chen J.F., Sun S.C., Liu C.H., and Liaw U.H. Mater. Chem. Phys. 77 (2003) 242
15. Son K.A., Mao A.Y., Kim B.Y., Liu F., Pylant E.D., Hess D.A., White J.M., Kwong D.L., Roberts D.A., and Vrtis R.N. J. Vac. Sci. Technol. A 16 (1998) 1670