Microstructure and stress in high-k Hf-Y-O thin films

Microelectronic Engineering

Volumn 88, Issue 5, 2011, Pages 561-563

  Gluch, J ^a   Rossler T ^b   Menzel, S B ^a   Eckert, J ^a  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

ALD; Film stress; Hf Y O; HfO2; High k; Microstructure

Indexed keywords

ALD; FILM STRESS; HF-Y-O; HFO2; HIGH-K;

ATOMIC LAYER DEPOSITION; CRYSTAL STRUCTURE; DEPOSITION; FUSED SILICA; HAFNIUM; HAFNIUM OXIDES; MICROELECTRONICS; MICROSTRUCTURE; MIM DEVICES; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; THERMAL EXPANSION; THIN FILMS; TITANIUM NITRIDE; VAPOR DEPOSITION; YTTRIUM; YTTRIUM OXIDE;

YTTRIUM ALLOYS;

EID: 79952483914     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.06.043     Document Type: Conference Paper

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