Hafnium-doped tantalum oxide high- k dielectrics with sub-2 nm equivalent oxide thickness

Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

  Lu, Jiang ^a   Kuo, Yue ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECT; GATE DIELECTRIC FILM; INTERFACE LAYER;

DEPOSITION; DIELECTRIC MATERIALS; ENERGY GAP; HAFNIUM; SILICON; SUBSTRATES;

TANTALUM COMPOUNDS;

EID: 28444439846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140482     Document Type: Article

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