-
1
-
-
74049133692
-
-
IEEE
-
S. Jenei, S. Decoutere, S. V. Huylenbroeck, G. Vanhorebeek, and B. Nauwelaers, in Proceedings of the IEEE Topical Meeting Si Monolithic IC in RF Systems, IEEE, p. 64 (2001).
-
(2001)
Proceedings of the IEEE Topical Meeting Si Monolithic IC in RF Systems
, pp. 64
-
-
Jenei, S.1
Decoutere, S.2
Huylenbroeck, S.V.3
Vanhorebeek, G.4
Nauwelaers, B.5
-
2
-
-
10044220766
-
-
THSFAP 0040-6090,. 10.1016/j.tsf.2004.08.148
-
T. H. Perng, C. H. Chien, C. W. Chena, P. Lehnen, and C. Y. Chang, Thin Solid Films THSFAP 0040-6090, 469, 345 (2004). 10.1016/j.tsf.2004.08.148
-
(2004)
Thin Solid Films
, vol.469
, pp. 345
-
-
Perng, T.H.1
Chien, C.H.2
Chena, C.W.3
Lehnen, P.4
Chang, C.Y.5
-
3
-
-
79951989226
-
-
The International Technology Roadmafor Semiconductors, Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications
-
The International Technology Roadmap for Semiconductors, Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications (2009), http://www.itrs.net/Links/2009ITRS/Home2009.htm
-
, vol.2009
-
-
-
4
-
-
0034454864
-
-
TDIMD5 0163-1918
-
M. Armacost, A. Augustin, P. Felsner, Y. Feng, G. Friese, J. Heidenreich, G. Hueckel, O. Prigge, and K. Stein, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2000, 157.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2000
, pp. 157
-
-
Armacost, M.1
Augustin, A.2
Felsner, P.3
Feng, Y.4
Friese, G.5
Heidenreich, J.6
Hueckel, G.7
Prigge, O.8
Stein, K.9
-
5
-
-
0035339020
-
Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
-
DOI 10.1109/55.919238, PII S0741310601037004
-
J. A. Babcock, S. G. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, IEEE Electron Device Lett. EDLEDZ 0741-3106, 22, 230 (2001). 10.1109/55.919238 (Pubitemid 32486882)
-
(2001)
IEEE Electron Device Letters
, vol.22
, Issue.5
, pp. 230-232
-
-
Babcock, J.A.1
Balster, S.G.2
Pinto, A.3
Dirnecker, C.4
Steinmann, P.5
Jumpertz, R.6
El-Kareh, B.7
-
6
-
-
0038732577
-
-
EDLEDZ 0741-3106,. 10.1109/LED.2002.807703
-
H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, M. B. Yu, X. Liu, and J. Winkler, IEEE Electron Device Lett. EDLEDZ 0741-3106, 24, 60 (2003). 10.1109/LED.2002.807703
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 60
-
-
Hu, H.1
Zhu, C.2
Yu, X.3
Chin, A.4
Li, M.F.5
Cho, B.J.6
Kwong, D.L.7
Foo, P.D.8
Yu, M.B.9
Liu, X.10
Winkler, J.11
-
7
-
-
0036610025
-
A capacitorless double-gate DRAM cell
-
DOI 10.1109/LED.2002.1004230, PII S0741310602052667
-
H. Hu, C. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi, IEEE Electron Device Lett. EDLEDZ 0741-3106, 23, 514 (2002). 10.1109/LED.2002.1004230 (Pubitemid 34731965)
-
(2002)
IEEE Electron Device Letters
, vol.23
, Issue.6
, pp. 345-347
-
-
Kuo, C.1
King, T.-J.2
Hu, C.3
-
8
-
-
0035872897
-
-
JAPIAU 0021-8979,. 10.1063/1.1361065
-
G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979, 89, 5243 (2001). 10.1063/1.1361065
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
9
-
-
0033307321
-
-
TDIMD5 0163-1918
-
B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 1999, 133.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.1999
, pp. 133
-
-
Lee, B.H.1
Kang, L.2
Qi, W.J.3
Nieh, R.4
Jeon, Y.5
Onishi, K.6
Lee, J.7
-
10
-
-
0035249419
-
2O RTA treatment
-
DOI 10.1109/55.902834
-
T. M. Pan, T. F. Lei, W. L. Yang, C. M. Cheng, and T. S. Chao, IEEE Electron Device Lett. EDLEDZ 0741-3106, 22, 68 (2001). 10.1109/55.902834 (Pubitemid 32254995)
-
(2001)
IEEE Electron Device Letters
, vol.22
, Issue.2
, pp. 68-70
-
-
Pan, T.M.1
Lei, T.F.2
Yang, W.L.3
Cheng, C.M.4
Chao, T.S.5
-
11
-
-
0025557348
-
Error correction techniques for high-performance differential A/D converters
-
DOI 10.1109/4.62175
-
K. S. Tan, S. Kiriake, M. de Wit, J. W. Fattaruso, C.-Y. Tsay, W. E. Matthews, and R. K. Hester, IEEE J. Solid-State Circuits IJSCBC 0018-9200, 25, 1318 (1990). 10.1109/4.62175 (Pubitemid 21738095)
-
(1990)
IEEE Journal of Solid-State Circuits
, vol.25
, Issue.6
, pp. 1318-1327
-
-
Tan Khen-Sang1
Kiriaki Sami2
De Wit Michiel3
Fattaruso John, W.4
Tsay Ching-Yuh5
Matthews W.Edward6
Hester Richard, K.7
-
12
-
-
0042665519
-
-
MCRLAS 0026-2714,. 10.1016/S0026-2714(03)00177-X
-
C. Besset, S. Bruyere, S. Blonkowski, S. Cremer, and E. Vincent, Microelectron. Reliab. MCRLAS 0026-2714, 43, 1237 (2003). 10.1016/S0026-2714(03) 00177-X
-
(2003)
Microelectron. Reliab.
, vol.43
, pp. 1237
-
-
Besset, C.1
Bruyere, S.2
Blonkowski, S.3
Cremer, S.4
Vincent, E.5
-
13
-
-
0042665438
-
-
IMIDDM 0149-645X
-
C. H. Huang, M. Y. Yang, A. Chin, C. X. Zhu, M. F. Li, and D. L. Kwong, IEEE MTT-S Int. Microwave Symp. Dig. IMIDDM 0149-645X, 1, 507 (2003).
-
(2003)
IEEE MTT-S Int. Microwave Symp. Dig.
, vol.1
, pp. 507
-
-
Huang, C.H.1
Yang, M.Y.2
Chin, A.3
Zhu, C.X.4
Li, M.F.5
Kwong, D.L.6
-
15
-
-
0033904734
-
-
JJAPA5 0021-4922,. 10.1143/JJAP.39.166
-
K. Morito, T. Suzuki, S. Sekiguchi, H. O. Okushi, and M. Fujimoto, Jpn. J. Appl. Phys. JJAPA5 0021-4922, 39, 166 (2000). 10.1143/JJAP.39.166
-
(2000)
Jpn. J. Appl. Phys.
, vol.39
, pp. 166
-
-
Morito, K.1
Suzuki, T.2
Sekiguchi, S.3
Okushi, H.O.4
Fujimoto, M.5
-
16
-
-
34547770804
-
3 metal-insulator-metal capacitors
-
DOI 10.1109/LED.2007.900876
-
K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, A. Chin, and H. L. Hwang, IEEE Electron Device Lett. EDLEDZ 0741-3106, 28, 694 (2007). 10.1109/LED.2007.900876 (Pubitemid 47242026)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.8
, pp. 694-696
-
-
Chiang, K.C.1
Cheng, C.H.2
Jhou, K.Y.3
Pan, H.C.4
Hsiao, C.N.5
Chou, C.P.6
McAlister, S.P.7
Chin, A.8
Hwang, H.L.9
-
17
-
-
0042842595
-
-
JAPIAU 0021-8979,. 10.1063/1.1579550
-
H. Hu, C. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, J. Appl. Phys. JAPIAU 0021-8979, 94, 551 (2003). 10.1063/1.1579550
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 551
-
-
Hu, H.1
Zhu, C.2
Lu, Y.F.3
Wu, Y.H.4
Liew, T.5
Li, M.F.6
Cho, B.J.7
Choi, W.K.8
Yakovlev, N.9
-
18
-
-
31944442924
-
Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides
-
DOI 10.1063/1.2170137, 052902
-
S. B́cu, S. Cŕmer, and J. L. Autran, Appl. Phys. Lett. APPLAB 0003-6951, 88, 052902 (2006). 10.1063/1.2170137 (Pubitemid 43190894)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.5
, pp. 1-3
-
-
Bcu, S.1
Crmer, S.2
Autran, J.-L.3
-
19
-
-
34047246671
-
Modeling of nonlinearities in the capacitance-voltage characteristics of high- k metal-insulator-metal capacitors
-
DOI 10.1063/1.2719618
-
P. Gonon and C. Valĺe, Appl. Phys. Lett. APPLAB 0003-6951, 90, 142906 (2007). 10.1063/1.2719618 (Pubitemid 46550125)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.14
, pp. 142906
-
-
Gonon, P.1
Vallae, C.2
-
20
-
-
35549008485
-
Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high- k metal-insulator-metal capacitors
-
DOI 10.1063/1.2803221
-
F. E. Kamel, P. Gononb, and C. Valĺe, Appl. Phys. Lett. APPLAB 0003-6951, 91, 172909 (2007). 10.1063/1.2803221 (Pubitemid 350015267)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.17
, pp. 172909
-
-
El Kamel, F.1
Gonon, P.2
Valle, C.3
-
21
-
-
27144480618
-
-
JPCSAW 0022-3697,. 10.1016/0022-3697(67)90097-2
-
J. H. Beaumont and P. W. M. Jacobs, J. Phys. Chem. Solids JPCSAW 0022-3697, 28, 657 (1967). 10.1016/0022-3697(67)90097-2
-
(1967)
J. Phys. Chem. Solids
, vol.28
, pp. 657
-
-
Beaumont, J.H.1
Jacobs, P.W.M.2
-
22
-
-
69549095966
-
-
MIENEF 0167-9317,. 10.1016/j.mee.2009.03.036
-
X. Song, R. Fu, and H. He, Microelectron. Eng. MIENEF 0167-9317, 86, 2217 (2009). 10.1016/j.mee.2009.03.036
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 2217
-
-
Song, X.1
Fu, R.2
He, H.3
-
23
-
-
2942661891
-
-
EDLEDZ 0741-3106
-
S. J. Ding, H. Hu, C. Zhu, S. J. Kim, X. Yu, M. F. Li, B. J. Cho, D. S. H. Chan, M. B. Yu, S. C. Rustagi, IEEE Electron Device Lett. EDLEDZ 0741-3106, 51, 886 (2004).
-
(2004)
IEEE Electron Device Lett.
, vol.51
, pp. 886
-
-
Ding, S.J.1
Hu, H.2
Zhu, C.3
Kim, S.J.4
Yu, X.5
Li, M.F.6
Cho, B.J.7
Chan, D.S.H.8
Yu, M.B.9
Rustagi, S.C.10
-
24
-
-
70349337795
-
-
JAPIAU 0021-8979,. 10.1063/1.3204666
-
A. Paskaleva, M. Lemberger, A. J. Bauer, W. Weinreich, J. Heitmann, E. Erben, U. Schröder, and L. Oberbeck, J. Appl. Phys. JAPIAU 0021-8979, 106, 054107 (2009). 10.1063/1.3204666
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 054107
-
-
Paskaleva, A.1
Lemberger, M.2
Bauer, A.J.3
Weinreich, W.4
Heitmann, J.5
Erben, E.6
Schröder, U.7
Oberbeck, L.8
-
25
-
-
0001674372
-
-
JAPIAU 0021-8979,. 10.1063/1.366181
-
R. J. Thomas, D. C. Dube, M. N. Kamalasanan, S. Chandra, and A. S. Bhalla, J. Appl. Phys. JAPIAU 0021-8979, 82, 4484 (1997). 10.1063/1.366181
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 4484
-
-
Thomas, R.J.1
Dube, D.C.2
Kamalasanan, M.N.3
Chandra, S.4
Bhalla, A.S.5
-
26
-
-
0035424175
-
-
JAPIAU 0021-8979,. 10.1063/1.1381043
-
S. Blonkowski, M. Regache, and A. Halimaoui, J. Appl. Phys. JAPIAU 0021-8979, 90, 1501 (2001). 10.1063/1.1381043
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 1501
-
-
Blonkowski, S.1
Regache, M.2
Halimaoui, A.3
-
27
-
-
0000102577
-
Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source
-
DOI 10.1063/1.116663, PII S0003695196021134
-
R. A. B. Devine, L. Vallier, J. L. Autran, P. Paillet, and J. L. Leray, Appl. Phys. Lett. APPLAB 0003-6951, 68, 1775 (1996). 10.1063/1.116663 (Pubitemid 126688381)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.13
, pp. 1775-1777
-
-
Devine, R.A.B.1
Vallier, L.2
Autran, J.L.3
Paillet, P.4
Leray, J.L.5
-
28
-
-
0040322495
-
-
JAPIAU 0021-8979,. 10.1063/1.365252
-
F. C. Chiu, J. J. Wang, J. Y. Lee, and S. C. Wu, J. Appl. Phys. JAPIAU 0021-8979, 81, 6911 (1997). 10.1063/1.365252
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 6911
-
-
Chiu, F.C.1
Wang, J.J.2
Lee, J.Y.3
Wu, S.C.4
-
29
-
-
0000508487
-
-
APPLAB 0003-6951,. 10.1063/1.103323
-
C. Isobe and M. Saitoh, Appl. Phys. Lett. APPLAB 0003-6951, 56, 907 (1999). 10.1063/1.103323
-
(1999)
Appl. Phys. Lett.
, vol.56
, pp. 907
-
-
Isobe, C.1
Saitoh, M.2
-
30
-
-
23544458252
-
-
X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, and M. B. Yu, in Material Research Society (MRS) 2003 Spring Meeting, 2003.
-
(2003)
Material Research Society (MRS) 2003 Spring Meeting
-
-
Yu, X.1
Zhu, C.2
Hu, H.3
Chin, A.4
Li, M.F.5
Cho, B.J.6
Kwong, D.L.7
Foo, P.D.8
Yu, M.B.9
-
31
-
-
33846975485
-
-
JESOAN 0013-4651,. 10.1149/1.2422874
-
K. C. Chiang, C. C. Huang, H. C. Pan, C. N. Hsiao, J. W. Lin, I. J. Hsieh, C. H. Cheng, C. P. Chou, A. Chin, H. L. Hwang, and S. P. McAlistere, J. Electrochem. Soc. JESOAN 0013-4651, 154, G54 (2007). 10.1149/1.2422874
-
(2007)
J. Electrochem. Soc.
, vol.154
, pp. 54
-
-
Chiang, K.C.1
Huang, C.C.2
Pan, H.C.3
Hsiao, C.N.4
Lin, J.W.5
Hsieh, I.J.6
Cheng, C.H.7
Chou, C.P.8
Chin, A.9
Hwang, H.L.10
McAlistere, S.P.11
-
32
-
-
0037718406
-
-
EDLEDZ 0741-3106,. 10.1109/LED.2002.808159
-
X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, and M. B. Yu, IEEE Electron Device Lett. EDLEDZ 0741-3106, 24, 63 (2003). 10.1109/LED.2002.808159
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 63
-
-
Yu, X.1
Zhu, C.2
Hu, H.3
Chin, A.4
Li, M.F.5
Cho, B.J.6
Kwong, D.-L.7
Foo, P.D.8
Yu, M.B.9
-
33
-
-
0141538337
-
-
S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D. L. Kwong, VLSI Symp. Tech. Dig., 2003, 77.
-
VLSI Symp. Tech. Dig.
, vol.2003
, pp. 77
-
-
Kim, S.J.1
Cho, B.J.2
Li, M.F.3
Zhu, C.4
Chin, A.5
Kwong, D.L.6
-
34
-
-
34548271565
-
-
TDIMD5 0163-1918
-
C. Zhu, H. Hu, X. Yu, S. J. Kim, A. Chin, M. F. Li, B. J. Cho, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2003, 36.5.1.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2003
, pp. 3651
-
-
Zhu, C.1
Hu, H.2
Yu, X.3
Kim, S.J.4
Chin, A.5
Li, M.F.6
Cho, B.J.7
Kwong, D.L.8
|