Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Central European Journal of Physics

Volumn 9, Issue 6, 2011, Pages 1472-1481

  Angermann, Heike ^a   Gref, Orman ^a   Stegemann, Bert ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

Hydrogen termination; Interface states; Silicon; Silicon oxide interface; Surfaces photovoltage; Wet chemical surfaces pre treatment

Indexed keywords

EID: 80054037829     PISSN: 18951082     EISSN: 16443608     Source Type: Journal    
DOI: 10.2478/s11534-011-0053-0     Document Type: Article

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