Ultrathin SiO2 layers on Si(111): Preparation, interface gap states and the influence of passivation

Nanotechnology

Volumn 19, Issue 42, 2008, Pages

  Stegemann, Bert ^a   Sixtensson, Daniel ^a   Lußky, Thomas ^a   Schoepke, Andreas ^a   Didschuns, Iris ^a   Rech, Bernd ^a   Schmidt, Manfred ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHEMICAL OXYGEN DEMAND; GALLIUM ALLOYS; HYDROGEN; OXIDATION; OXYGEN; PHOTOCURRENTS; PHOTOELECTRON SPECTROSCOPY; PLASMAS; SILICON; SILICON COMPOUNDS; ULTRAHIGH VACUUM; VACUUM;

GAP STATE DENSITIES; GAP STATES; HYDROGEN PASSIVATIONS; HYDROGEN PLASMAS; IN-SITU; INTERFACE RECOMBINATION VELOCITIES; LOW DENSITIES; MINORITY CARRIER LIFETIMES; NEUTRAL OXYGEN ATOMS; OXIDATION STATES; OXIDIZED SAMPLES; PHOTOCONDUCTANCE; PHOTOCURRENT MEASUREMENTS; PHOTOVOLTAICS; PRE-REQUISITES; RF PLASMAS; SI(111); SI(111) SUBSTRATES; THERMAL OXIDATIONS; UV PHOTOELECTRON SPECTROSCOPIES;

PASSIVATION;

HYDROGEN; NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; ATOM; MEASUREMENT; OXIDATION; PLASMA; PRIORITY JOURNAL; STEADY STATE; VELOCITY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 56349090005     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/42/424020     Document Type: Article

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