Structure and photoelectrical properties of SiO2/Si/SiO2 single quantum wells prepared under ultrahigh vacuum conditions

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2100-2104

  Stegemann, Bert ^a   Schoepke, Andreas ^a   Schmidt, Manfred ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Photoconductivity; Photoinduced effects; Quantum wells, wires and dots; Raman spectroscopy; Silicon; Surfaces and interfaces; XPS

Indexed keywords

AMORPHOUS SILICON; PHOTOCONDUCTIVITY; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

NEUTRAL ATOMIC OXYGEN; PHOTOELECTRICAL PROPERTIES; PHOTOINDUCED EFFECTS;

SILICA;

EID: 42649114475     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.10.035     Document Type: Article

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