On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process

Applied Surface Science

Volumn 256, Issue 19, 2010, Pages 5757-5764

  Pincik, E ^a   Kobayashi, H ^b   Rusnak, J ^a   Kim, W B ^b   Brunner, R ^a   Malinovsky, L ^a   Matsumoto, T ^b   Imamura, K ^b   Jergel, M ^a   Takahashi, M ^b   Higashi, Y ^b   Kucera, M ^c   Mikula, M ^d  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b OSAKA UNIVERSITY   (Japan)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^d SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

Deep levels; Ellipsometry; Passivation; Silicon; Very thin oxide

Indexed keywords

DANGLING BONDS; DEFECT DENSITY; ELLIPSOMETRY; ENERGY GAP; HETEROJUNCTIONS; INTERFACE STATES; LEAKAGE CURRENTS; OXIDATION; SILICON; SILICON COMPOUNDS; SOLUTIONS;

DEEP-LEVELS; INTERFACE DEFECT STATE; PHOTOLUMINESCENCE SIGNALS; POST-METALLIZATION ANNEALING; QUANTUM CONFINEMENT EFFECTS; THIN OXIDES; WET CHEMICAL OXIDATION; WET CHEMICAL PROCESS;

PASSIVATION;

EID: 77953133463     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.096     Document Type: Article

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