Passivation of Si and a-Si:H surfaces by thin oxide and oxy-nitride layers

Applied Surface Science

Volumn 252, Issue 21, 2006, Pages 7713-7721

  Pincik E ^a   Kobayashi, H ^b   Rusnak J ^a   Takahashi, M ^b   Brunner, R ^a   Jergel, M ^a   Morales Acevedo, A ^c   Ortega, L ^d   Kakos J ^e  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b OSAKA UNIVERSITY   (Japan)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^e FCFT   (Slovakia)

Author keywords

Amorphous hydrogenated silicon; Crystalline silicon; Cyanide treatment; Interface; Quantum well; Silicon dioxide

Indexed keywords

DOPING (ADDITIVES); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE; SUBSTRATES;

AMORPHOUS HYDROGENATED SILICON; CRYSTALLINE SILICON; CYANIDE TREATMENT; INTERFACES;

AMORPHOUS SILICON;

EID: 33747389435     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.072     Document Type: Article

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