A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source

Thin Solid Films

Volumn 518, Issue 16, 2010, Pages 4662-4666

  Sarikov, Andrey ^a   Stegemann, Bert ^b,c   Schmidt, Manfred ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b HAHN MEITNER INSTITUT   (Germany)

^c UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

Pb centre passivation; SiO2 Si interfaces; Thermalised hydrogen plasma treatment; Ultrathin SiO2 films

Indexed keywords

ANALYTICAL SOLUTIONS; ATOMIC HYDROGEN; GENERAL MODEL; HYDROGEN ATOMS; HYDROGEN PLASMAS; INITIAL DENSITY; MODEL PREDICTION; PB CENTRE PASSIVATION; RELATIVE DENSITY; SI(111) SUBSTRATE; SIO2/SI INTERFACES; SUBSTRATE INTERFACE; THEORETICAL MODELS; THERMALISED HYDROGEN PLASMA TREATMENT; TREATMENT TIME; ULTRA-THIN; ULTRATHIN SIO2 FILMS;

ATOMS; HYDROGEN; PASSIVATION; PLASMA APPLICATIONS; PLASMA SOURCES; SILICON; SUBSTRATES; VOLTAGE DIVIDERS;

SILICON COMPOUNDS;

EID: 77955635445     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.054     Document Type: Conference Paper

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