Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(1 1 1), Si(1 1 0), and Si(1 0 0)

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 1019-1024

  Stegemann, Bert ^a   Schoepke, Andreas ^a   Sixtensson, Daniel ^a   Gorka, Benjamin ^a   Lussky, Thomas ^a   Schmidt, Manfred ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Gap states; Photoelectron spectroscopy; Silicon Silicon dioxide interface

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; DEFECT STATE; ELECTRICAL PROPERTIES; GAP STATES; HYDROGEN ATOMS; HYDROGEN PASSIVATIONS; HYDROGEN PLASMA TREATMENTS; IN-SITU PROCESS; INTERFACE DEGRADATIONS; INTERFACIAL GAPS; OXIDE GROWTHS; OXYGEN ATOMS; PLASMA TREATMENTS; POLYCRYSTALLINE-SI; RF-PLASMAS; SI (1 1 1); SI(1 0 0 ); SILICON/SILICON DIOXIDE INTERFACE; THIN-FILM SOLAR CELLS; ULTRA-HIGH VACUUMS; ULTRA-THIN OXIDE LAYERS; UV-PHOTOELECTRON SPECTROSCOPIES;

ATOMS; DANGLING BONDS; HYDROGEN; OXYGEN; PASSIVATION; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PLASMA APPLICATIONS; PLASMAS; POLYSILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; SOLAR ENERGY; SOLAR POWER GENERATION; SPECTRUM ANALYSIS; ULTRAHIGH VACUUM;

PHOTOELECTRON SPECTROSCOPY;

EID: 67349251205     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.012     Document Type: Article

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