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Volumn 84, Issue 12, 2011, Pages

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

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EID: 80053920116     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.125201     Document Type: Article
Times cited : (54)

References (39)
  • 5
    • 33745512325 scopus 로고    scopus 로고
    • Origin of the n-type conductivity of InN: The role of positively charged dislocations
    • DOI 10.1063/1.2214156
    • L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2214156 88, 252109 (2006). (Pubitemid 43959084)
    • (2006) Applied Physics Letters , vol.88 , Issue.25 , pp. 252109
    • Piper, L.F.J.1    Veal, T.D.2    McConville, C.F.3    Lu, H.4    Schaff, W.J.5
  • 9
    • 41549147195 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.77.115207
    • X. M. Duan and C. Stampfl, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.77.115207 77, 115207 (2008).
    • (2008) Phys. Rev. B , vol.77 , pp. 115207
    • Duan, X.M.1    Stampfl, C.2
  • 10
    • 60449089329 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.79.035207
    • X. M. Duan and C. Stampfl, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.79.035207 79, 035207 (2009).
    • (2009) Phys. Rev. B , vol.79 , pp. 035207
    • Duan, X.M.1    Stampfl, C.2
  • 11
    • 66749143654 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.79.174202
    • X. M. Duan and C. Stampfl, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.79.174202 79, 174202 (2009).
    • (2009) Phys. Rev. B , vol.79 , pp. 174202
    • Duan, X.M.1    Stampfl, C.2
  • 18
    • 33745781471 scopus 로고    scopus 로고
    • Influence of V/III molar ratio on the formation of in vacancies in InN grown by metal-organic vapor-phase epitaxy
    • DOI 10.1063/1.2219335
    • A. Pelli, K. Saarinen, F. Tuomisto, S. Ruffenach, and O. Briot, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2219335 89, 011911 (2006). (Pubitemid 44025415)
    • (2006) Applied Physics Letters , vol.89 , Issue.1 , pp. 011911
    • Pelli, A.1    Saarinen, K.2    Tuomisto, F.3    Ruffenach, S.4    Briot, O.5
  • 21
    • 18544407214 scopus 로고    scopus 로고
    • Intrinsic limitations to the doping of wide-gap semiconductors
    • DOI 10.1016/S0921-4526(01)00417-3, PII S0921452601004173
    • W. Walukiewicz, Physica B PHYBE3 0921-4526 10.1016/S0921-4526(01)00417-3 302-303, 123 (2001). (Pubitemid 32551292)
    • (2001) Physica B: Condensed Matter , vol.302-303 , pp. 123-134
    • Walukiewicz, W.1
  • 22
    • 13744253600 scopus 로고    scopus 로고
    • Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
    • DOI 10.1063/1.1845575, 043514
    • A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira, and R. Suzuki, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1845575 97, 043514 (2005). (Pubitemid 40238268)
    • (2005) Journal of Applied Physics , vol.97 , Issue.4 , pp. 0435141-0435145
    • Uedono, A.1    Chichibu, S.F.2    Higashiwaki, M.3    Matsui, T.4    Ohdaira, T.5    Suzuki, R.6
  • 28
    • 0000573258 scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.34.3820
    • E. Boroński and R. M. Nieminen, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.34.3820 34, 3820 (1986).
    • (1986) Phys. Rev. B , vol.34 , pp. 3820
    • Boroński, E.1    Nieminen, R.M.2
  • 29
    • 25744460922 scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.50.17953
    • P. E. Blöchl, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.50. 17953 50, 17953 (1994).
    • (1994) Phys. Rev. B , vol.50 , pp. 17953
    • Blöchl, P.E.1
  • 30
    • 2442537377 scopus 로고    scopus 로고
    • PRLTAO 1098-0121 10.1103/PhysRevB.54.11169
    • G. Kresse and J. Furthmüller, Phys. Rev. B PRLTAO 1098-0121 10.1103/PhysRevB.54.11169 54, 11169 (1996).
    • (1996) Phys. Rev. B , vol.54 , pp. 11169
    • Kresse, G.1    Furthmüller, J.2
  • 33
    • 0005275769 scopus 로고
    • JPFMAT 0305-4608 10.1088/0305-4608/13/2/009
    • M. J. Puska and R. M. Nieminen, J. Phys. F JPFMAT 0305-4608 10.1088/0305-4608/13/2/009 13, 333 (1983).
    • (1983) J. Phys. F , vol.13 , pp. 333
    • Puska, M.J.1    Nieminen, R.M.2
  • 37
    • 3343005552 scopus 로고    scopus 로고
    • JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.05.029
    • B. Maleyre, O. Briot, and S. Ruffenach, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.05.029 269, 15 (2004).
    • (2004) J. Cryst. Growth , vol.269 , pp. 15
    • Maleyre, B.1    Briot, O.2    Ruffenach, S.3


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