Point defects in group-III nitride semiconductors studied by positron annihilation

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3075-3079

  Uedono, A ^a   Ishibashi, S ^b   Ohdaira, T ^b   Suzuki, R ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Characterization; A1. Doping; A1. Point defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

A1. CHARACTERIZATION; A1. DOPING; A1. POINT DEFECTS; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. SEMICONDUCTING III-V MATERIALS;

DOPPLER EFFECT; ELECTRONS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; RARE EARTH ELEMENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; VACANCIES; VAPORS;

DEFECTS;

EID: 65749090211     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.051     Document Type: Article

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