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Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

(5) Reurings, Floris a Tuomisto, Filip a Gallinat, Chad S b Koblmüller, Gregor b,c Speck, James S b

a AALTO UNIVERSITY (Finland)

b University of California (United States)

c WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT SCATTERING; GROWTH CONDITIONS; HIGH QUALITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; STRUCTURAL QUALITIES; THREADING DISLOCATION; VACANCY FORMATION;

ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SINGLE CRYSTALS; THERMODYNAMICS; VACANCIES;

MOLECULAR BEAMS;

EID: 78650733797 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3516467 Document Type: Article

Times cited : (23)

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