Vacancy defects in epitaxial InN: Identification and electrical properties

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 41-49

  Laakso, A ^a   Oila, J ^a   Kemppinen, A ^a   Saarinen, K ^a   Egger, W ^b   Liszkay, L ^b,d   Sperr, P ^b   Lu, H ^c   Schaff, W J ^c  

^a AALTO UNIVERSITY   (Finland)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c Cornell University   (United States)

^d WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

A1. Point defects; A1. Positron annihilation spectroscopy; A3. Molecular beam epitaxy; B1 InN

Indexed keywords

ELECTRON MOBILITY; ELECTRON SCATTERING; EPITAXIAL GROWTH; HALL EFFECT; HYDROGEN; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

DRIFT VELOCITY; INFRARED REGION; INN; VACANCY DEFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3343021155     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.032     Document Type: Conference Paper

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