Electrical properties of InN grown by molecular beam epitaxy

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 358-371

  Schaff, William J ^a   Lu, Hai ^a   Eastman, Lester F ^a   Walukiewicz, Wladek ^b   Yu Man, Kin ^b   Keller, Stacia ^c   Kurtz, Sarah ^d   Keyes, Brian ^d   Gevilas, Lynn ^d  

^a Department of Obstetrics Gynecology   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP RATIOS; ELECTROCHEMICAL SENSING; MOLE FRACTION; SURFACE ELECTRON ACCUMULATION;

ALUMINUM NITRIDE; CARRIER CONCENTRATION; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTROCHEMISTRY; ENERGY GAP; GALLIUM NITRIDE; INTERFACES (MATERIALS); METHANOL; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; WATER;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 17044440192     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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