Irradiation-induced defects in InN and GaN studied with positron annihilation

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1087-1090

  Reurings, Floris ^a   Tuomisto, Filip ^a   Egger, Werner ^b   Löwe, Benjamin ^b   Ravelli, Luca ^c   Sojak, Stanislav ^d   Liliental Weber, Zuzanna ^e   Jones, Rebecca E ^e   Yu, Kin M ^e   Walukiewicz, Wladek ^e   Schaff, William J ^f  

^a AALTO UNIVERSITY   (Finland)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c UNIVERSITY OF TRENTO   (Italy)

^d SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^f School of Chemical and Molecular Engineering   (United States)

Author keywords

InN and GaN films; Irradiation induced defects; Positron annihilation; Vacancy formation

Indexed keywords

FLUENCES; GAN FILM; IRRADIATION-INDUCED DEFECTS; LOW RATES; METAL-ORGANIC; VACANCY FORMATION; VAPOUR DEPOSITION;

ANNEALING; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; DEFECTS; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; IRRADIATION; ORGANIC CHEMICALS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; RADIATION;

VACANCIES;

EID: 77952740205     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983111     Document Type: Conference Paper

References (22)

1. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227, 481 (2001).
2. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
3. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
4. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
5. Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys. Part 1 42, 2549 (2003).
6. J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager, III, E. E. Haller, H. Lu, W. J. Schaff, W. K. Metzger, and S. Kurtz, J. Appl. Phys. 94, 6477 (2003).
7. E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht, and P. P. Ruden, J. Appl. Phys. 85, 916 (1999).
8. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
9. R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 96, 125505 (2006).
10. J. W. L. Yim, R. E. Jones, K. M. Yu, J. W. Ager, III, W. Walukiewicz, W. J. Schaff, and J. Wu, Phys. Rev. B 76, 041303(R). (2007).
11. S. X. Li, K. M. Yu, J. Wu, R. E. Jones, W. Walukiewicz, J. W. Ager, III, W. Shan, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 71, 161201 (2005).
12. R. E. Jones, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, Z. Liliental-Weber, J. W. Ager, III, E. E. Haller, H. Lu, and W. J. Schaff, Physica B 376/377, 436 (2006).
13. R. E. Jones, S. X. Li, E. E. Haller, H. C. M. van Genuchten, K. M. Yu, J. W. Ager, III, Z. Liliental-Weber, W. Walukiewicz, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 90, 162103 (2007).
14. K. Saarinen, P. Hautojärvi, and C. Corbel, in: Identification of Defects in Semiconductors, edited by M. Stavola, Semiconductors and Semimetals, Vol.51A (Academic Press, New York, 1998), chap. 5.
15. A. Zubiaga, J. A. García, F. Plazaola, F. Tuomisto, J. Zuñiga-Pérez, and V. Muñoz-Sanjosé, Phys. Rev. B 75, 205305 (2007).
16. F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz, and W. J. Schaff, Phys. Rev. B 75, 193201 (2007).
17. F. Tuomisto, V. Ranki, D. C. Look, and G. C. Farlow, Phys. Rev. B 76, 165207 (2007).
18. J. Oila, A. Kemppinen, A. Laakso, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 84, 1486 (2004).
19. W. Walukiewicz, Physica B 302, 123 (2001).
20. C. Stampfl, C. G. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann, Phys. Rev. B 61, R7846 (2000).
21. A. Pelli, K. Saarinen, F. Tuomisto, S. Ruffenach, and O. Briot, Appl. Phys. Lett. 89, 011911 (2006).
22. F. Reurings, F. Tuomisto, G. Koblmüller, C. S. Gallinat, and J. S. Speck, Phys. Status Solidi C 6, S401 (2009).