Modeling and characterization of current gain versus temperaturein 4H-SiC power BJTs

IEEE Transactions on Electron Devices

Volumn 57, Issue 3, 2010, Pages 704-711

  Buono, Benedetto ^a   Ghandi, Reza ^a   Domeij, Martin ^a   Malm, Bengt Gunnar ^a   Zetterling, Carl Mikael ^a   Ostling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Bipolar junction transistor (BJT); Current gain; Interface traps; Silicon carbide (SiC); Simulations; Temperature modeling

Indexed keywords

ABRUPT DROPS; BASE-COLLECTOR JUNCTIONS; BIPOLAR JUNCTION TRANSISTOR; CAPTURE CROSS SECTIONS; COLLECTOR CURRENTS; CURRENT GAINS; DOPING CONCENTRATION; ENERGY LEVEL; HIGH INJECTION; HIGH TEMPERATURE; HIGHER TEMPERATURES; INTERFACE TRAPS; IONIZATION DEGREE; NEGATIVE TEMPERATURES; PHYSICAL MODELING; POWER BJTS; ROOM TEMPERATURE; SURFACE RECOMBINATIONS; TEMPERATURE BEHAVIOR; TEMPERATURE MODELING; TRAP CONCENTRATION;

BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); LASERS; MODELS; SILICON OXIDES; TUNNEL DIODES;

SILICON CARBIDE;

EID: 77649179200     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2039099     Document Type: Article

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