Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes

Microelectronics Journal

Volumn 38, Issue 12, 2007, Pages 1273-1279

  Della Corte, Francesco G ^a   Pezzimenti, Fortunato ^a   Nipoti, Roberta ^b  

^a UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^b CNR   (Italy)

Author keywords

4H SiC p i n diode; Doping profile; Ion implantation; J V characteristic; Junction depth

Indexed keywords

COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; IONIZATION; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMAL EFFECTS;

ATOM IONIZATION EFFICIENCY; DEVICE SIMULATORS; DOPING PROFILE; JUNCTION DEPTH; ROOM TEMPERATURE;

SEMICONDUCTOR DIODES;

EID: 36348982196     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.024     Document Type: Article

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