A self-consistent model of the static and switching behaviour of 4h-SiC diodes

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2010, Pages 405-408

  Bellone, Salvatore ^a   Della Corte, Francesco ^b   Di Benedetto, Luigi ^a   Freda, Albanese Loredana ^a   Licciardo, Gian Domenico ^a  

^a UNIVERSITY OF SALERNO   (Italy)

^b Mediterranea University of Reggio Calabria   (United States)

Author keywords

4H SiC; PIN diode; Reverse recovery; Switching behaviour

Indexed keywords

4H-SIC; CARRIER DISTRIBUTIONS; MINORITY CARRIER; NUMERICAL SIMULATION; PIN DIODE; REVERSE RECOVERY; SELF-CONSISTENT MODEL; SIC DIODES; SPATIAL DISTRIBUTION;

SEMICONDUCTOR DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78651106777     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2010.5650594     Document Type: Conference Paper

References (5)

1. http://www.cree.com/
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3. S. Bellone, L. Freda Albanese, Licciardo G., "A Self- Consistent Model of the OCVD Behaviour of Si and 4HSiC p+-n-n+ Diodes", IEEE Trans. on Electron Dev., 56(12), pp. 2902-2910, 2009.
4. S. Bellone, H-C. Neitzert, G.D. Licciardo, "Modelling and characterisation of the OCVD response at an arbitrary time and injection level", Solid State Electronics, 48(7), pp.127-1131, 2004.
5. "ATLAS User's Manual", Version 5.10R, SILVACO International.