Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

SPEEDAM 2010 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion

Volumn , Issue , 2010, Pages 541-544

  Gonzalez L H ^a   Brito, E B ^a   Perez, S N ^a   Rodriguez M A ^b   Yris, J C ^c  

^a ESIME C Del IPN   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DEL CARMEN   (Mexico)

^c UNIVERSIDAD JUÁREZ AUTÓNOMA DE TABASCO   (Mexico)

Author keywords

Modelling; Pspice; Silicon carbide

Indexed keywords

AMBIPOLAR DIFFUSION; MODELLING; PHYSICAL PHENOMENA; PIN DIODE; PSPICE; STORED CHARGE;

DIFFERENTIAL EQUATIONS; DYNAMICS; MODELS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956601462     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SPEEDAM.2010.5542168     Document Type: Conference Paper

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