Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1928-1933

  Tamaki, Tomohiro ^a,b   Walden, Ginger G ^b   Sui, Yang ^b   Cooper, James A ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b PURDUE UNIVERSITY   (United States)

Author keywords

4H SiC; IGBT; Turnoff

Indexed keywords

ACTIVE FILTERS; BIPOLAR TRANSISTORS; CARRIER LIFETIME; COMPUTER SIMULATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NONMETALS; NUMERICAL ANALYSIS; SILICON; TRANSISTORS;

4H-SIC; BUFFER LAYERS; HIGH VOLTAGES; IGBT; INSULATED GATE BIPOLAR TRANSISTORS; MAJOR FACTOR; MINORITY CARRIER LIFETIMES; NON-PUNCH-THROUGH; NUMERICAL SIMULATIONS; NUMERICAL STUDIES; P-CHANNEL; SILICON CARBIDE DEVICES; SWITCHING LOSSES; TURNOFF;

SILICON CARBIDE;

EID: 49249132538     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926594     Document Type: Article

References (13)

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