Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 639-644

  Danielsson, E ^a   Zetterling, C M ^a   Domeij, M ^a   Ostling M ^a   Forsberg, U ^b   Janzen E ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Bipolar transistor; Breakdown voltage; Thermal conductivity

Indexed keywords

CAMERAS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SILICON CARBIDE; THERMAL CONDUCTIVITY;

CURRENT GAIN;

BIPOLAR TRANSISTORS;

EID: 0037398610     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)002186     Document Type: Article

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