Simplified models of forward conduction for SIC power PiN and schottky diodes with temperature dependency

IET Conference Publications

Volumn 2010, Issue 563 CP, 2010, Pages

  Abuishmais, Ibrahim ^a   Undeland, Tore M ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Diodes; PiN; Schottky; Semiconductor modelling; Silicon Carbide

Indexed keywords

DEVICE MODELS; DEVICE PERFORMANCE; DEVICE STRUCTURES; ELECTRONICS APPLICATIONS; FORWARD CONDUCTION CHARACTERISTICS; MEASUREMENT RESULTS; NEW DESIGN; PIN; POWER ELECTRONIC SYSTEMS; POWER RECTIFIERS; RELIABLE MODELS; SCHOTTKY; SCHOTTKY DIODES; SEMICONDUCTOR MODELLING; SIC DEVICES; SIMPLIFIED MODELS; SIMULATION RESULT; TEMPERATURE DEPENDENCIES; TEMPERATURE RANGE;

COMPUTER SIMULATION; ELECTRIC RECTIFIERS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956080886     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/cp.2010.0120     Document Type: Conference Paper

References (17)

1. M. Willander, M. Friesel, Q.-u. Wahab, and B. Straumal, "Silicon carbide and diamond for high temperature device applications," Journal of Materials Science: Materials in Electronics, vol. 17, pp. 1-25, 2006.
2. K. Fujihira, S. Tamura, T. Kimoto, and H. Matsunami, "Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode," Electron Devices, IEEE Transactions on, vol. 49, pp. 150-154, 2002.
3. J. B. Casady and R. W. Johnson, "Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review," Solid-State Electronics, vol. 39, pp. 1409-1422, 1996.
4. B. J. Baliga, Advanced Power Rectifier Concepts: Springer Publishing Company, Incorporated, 2009.
5. B. J. Baliga, Silicon carbide power devices. Hackensack, N.J.: World Scientific, 2005.
6. R. Singh, "Reliability and performance limitations in SiC power devices," Microelectronics and Reliability, vol. 46, pp. 713-730, 2006.
7. X. Wang, L. Lu, S. Pytel, D. Franzoni, E. Santi, J. L. Hudgins, and P. R. Palmer, "Multilevel device models developed for the virtual test bed (VTB)," in Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE, 2004, pp. 2528-2535 vol.4.
8. P. Leturcq, "A study of distributed switching processes in IGBTs and other power bipolar devices," in Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE, 1997, pp. 139-147 vol.1.
9. L. Lu, S. G. Pytel, E. Santi, A. T. Bryant, J. L. Hudgins, and P. R. Palmer, "Physical modeling of forward conduction in IGBTs and diodes," in Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005, 2005, pp. 2635-2642 Vol. 4.
10. A. G. M. Strollo, "A new SPICE subcircuit model of power p-i-n diode," Power Electronics, IEEE Transactions on, vol. 9, pp. 553-559, 1994.
11. B. J. Baliga, Modern power devices. New York: Wiley, 1987.
12. C. Seok Cheow, "Effect of carrier lifetime on the forward characteristics of high-power devices," Electron Devices, IEEE Transactions on, vol. 17, pp. 647-652, 1970.
13. K. Asano, T. Funaki, Y. Sugawara, and T. Hikihara, "Simple circuit model of SiC pin diode composed by using experimental electrical characteristics," IEICE Electronics Express, vol. 2, pp. 392-398, 2005.
14. S. K. Cheung and N. W. Cheung, "Extraction of Schottky diode parameters from forward current-voltage characteristics," Applied Physics Letters, vol. 49, pp. 85-87, 1986.
15. C. F. Pirri, S. Ferrero, L. Scaltrito, D. Perrone, S. Guastella, M. Furno, G. Richieri, and L. Merlin, "Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes," Microelectronic Engineering, vol. 83, pp. 86-88, 2006.
16. Z. Hui, L. M. Tolbert, and B. Ozpineci, "System Modeling and Characterization of SiC Schottky Power Diodes," in Computers in Power Electronics, 2006. COMPEL '06. IEEE Workshops on, 2006, pp. 199-204.
17. M. Roschke and F. Schwierz, "Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]," Electron Devices, IEEE Transactions on, vol. 48, pp. 1442-1447, 2001.