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Applied Physics A: Materials Science and Processing

Volumn 105, Issue 1, 2011, Pages 183-188

Sb2Te3-HfO2 composite films for low-power phase change memory application

(6) Lu, Yegang a,b Song, Sannian a Song, Zhitang a Ren, Kun a,b Liu, Bo a Feng, Songlin a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ELECTRICAL RESISTANCE MEASUREMENT; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; IN-SITU TEMPERATURE; LONG TERM STABILITY; LOW POWER; MEMORY DEVICE; ORDERS OF MAGNITUDE; PHASE CHANGE; RESET VOLTAGE; RESISTANCE RATIO;

ANTIMONY; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; FIELD EMISSION MICROSCOPES; GERMANIUM; HAFNIUM OXIDES; PHASE CHANGE MEMORY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOSITE FILMS;

EID: 80053569150 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6478-x Document Type: Article

Times cited : (8)

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