Oxygen-doped Si15Sb85 thin film for good data retention and high speed phase-change memory application

Semiconductor Science and Technology

Volumn 24, Issue 4, 2009, Pages

  Zhang, Yin ^a   Feng, Jie ^a   Cai, Bingchu ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION ACTIVATION ENERGY; CRYSTALLIZATION TEMPERATURE; DATA RETENTION; ELECTRICAL PROPERTY; FREE SI; GOOD DATA; HEXAGONAL PHASE; MAXIMUM TEMPERATURE; OXYGEN DOPING; OXYGEN PARTIAL PRESSURE; OXYGEN-DOPED; PHASE-CHANGE MEMORIES; RESET PULSE; RESISTANCE RATIO; RESISTIVITY RATIO;

ACTIVATION ENERGY; CRYSTALLIZATION; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GERMANIUM; HOLOGRAPHIC INTERFEROMETRY; METALLIC GLASS; OXYGEN; SILICON; TELLURIUM COMPOUNDS; THIN FILMS; TRANSIENTS;

PHASE CHANGE MEMORY;

EID: 68949128913     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/4/045016     Document Type: Article

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