The reason for the increased threshold switching voltage of SiO2 doped Ge2 Sb2 Te5 thin films for phase change random access memory

Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

  Ryu, Seung Wook ^a   Lee, Jong Ho ^a   Ahn, Young Bae ^a   Kim, Choon Hwan ^b   Yang, Bong Seob ^a   Kim, Gun Hwan ^a   Kim, Soo Gil ^b   Lee, Se Ho ^b   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CONSTANTS; ELECTRICAL RESISTIVITY; GENERATION RATE; PHASE CHANGE RANDOM ACCESS MEMORY; THRESHOLD SWITCHING; URBACH EDGE;

DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GERMANIUM; IMPACT IONIZATION; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 70349507160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3232237     Document Type: Article

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