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Journal of Ceramic Processing Research

Volumn 10, Issue 4, 2009, Pages 433-436

The electrical switching phenomenon of a phase change memory using nitrogen doped Sb2Te3

(8) Lee, Seung Yun a Cho, Sung Hyuk a Kim, Hyung Keun a Oh, Jin Ho b Kim, Hyeong Joon b Hong, Suk Kyoung c Roh, Jae Sung c Choi, Doo Jin a

a Yonsei University (South Korea)

b Seoul National University (South Korea)

c Hynix Semiconductor Inc (South Korea)

Author keywords

Adhesion; Nitrogen; PRAM; Sb2Te3(ST); Threshold voltage

Indexed keywords

EID: 70350155314 PISSN: 12299162 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (3)

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