Electronic properties of GST for non-volatile memory

Microelectronics Journal

Volumn 37, Issue 9, 2006, Pages 982-984

  Lv, Hangbing ^a   Zhou, Peng ^a   Lin, Yinyin ^a   Tang, Tingao ^a   Qiao, Baowei ^b   Lai, Yunfeng ^b   Feng, Jie ^b   Cai, Bingchu ^b   Chen, Bomy ^c  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

GST; Phase change memory

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRONIC PROPERTIES; HEAT TREATMENT; LITHOGRAPHY; TELLURIUM; THIN FILMS;

GST; LITHOGRAPHIC TECHNOLOGY; PHASE CHANGE MEMORY;

GERMANIUM COMPOUNDS;

EID: 33745893237     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.01.005     Document Type: Article

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