Effects of Si doping on the structural and electrical properties of Ge 2 Sb 2 Te 5 films for phase change random access memory

Applied Surface Science

Volumn 252, Issue 24, 2006, Pages 8404-8409

  Qiao, Baowei ^a   Feng, Jie ^a   Lai, Yunfeng ^a   Ling, Yun ^b   Lin, Yinyin ^b   Tang, Ting'ao ^b   Cai, Bingchu ^a   Chen, Bomy ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b FUDAN UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Activation energy; Dynamic resistance; Ge 2 Sb 2 Te 5; Phase change memory; Resistivity; Si doping

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; MELTING; SILICON; SUPERCONDUCTING TRANSITION TEMPERATURE; THERMODYNAMIC STABILITY; THIN FILMS;

DOPANT CONCENTRATION; DYNAMIC RESISTANCE; PHASE-CHANGE MEMORY; SI DOPING;

DOPING (ADDITIVES);

EID: 33749120764     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.11.047     Document Type: Article

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