Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Jang, Moon Hyung ^a   Park, Seung Jong ^a   Lim, Dong Heok ^a   Park, Sung Jin ^a   Cho, Mann Ho ^a   Ko, Dae Hong ^a   Heo, M Y ^a   Sohn, Hyun Chul ^a   Kim, Sang Ok ^b  

^a Yonsei University   (South Korea)

^b Seonam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; BOND ENERGIES; CRYSTALLINE PHASE; CRYSTALLINE PHASIS; EFFECT OF IN; ELECTRICAL CONDUCTIVITY; PHASE CHANGE; X RAY PHOTOELECTRON SPECTRA;

BINDING ENERGY; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; INDIUM; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

TELLURIUM COMPOUNDS;

EID: 76449087144     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3308479     Document Type: Article

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