Phase change memory cell using Si2Sb2Te3 material

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 1, 2010, Pages

  Ren, Kun ^a   Rao, Feng ^a   Song, Zhitang ^a   Wu, Liangcai ^a   Zhou, Xilin ^a   Liu, Bo ^a   Feng, Songlin ^a   Xi, Wei ^a   Chen, Bomy ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; CRYSTALLINE SI; DATA RETENTION; HIGH-RESISTANCE STATE; LOWER-POWER CONSUMPTION; NANOCOMPOSITE MATERIALS; OPERATION SPEED; PHASE CHANGE; PHASE CHANGE MEMORY CELLS; PHASE MEMORY; THERMALLY STABLE;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; GERMANIUM; NANOCOMPOSITES; SEMICONDUCTOR STORAGE; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 77957882518     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.080212     Document Type: Article

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