Low thermal conductivity in Ge2 Sb2 Te5 - SiOx for phase change memory devices

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Lee, Tae Yon ^a   Kim, Kijoon H P ^a   Suh, Dong Seok ^a   Kim, Cheolkyu ^a   Kang, Youn Seon ^a   Cahill, David G ^b   Lee, Dongbok ^c   Lee, Min Hyun ^c   Kwon, Min Ho ^c   Kim, Ki Bum ^c   Khang, Yoonho ^a  

^a SAMSUNG Electronics   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

IMMISCIBLE MIXTURES; IN-PHASE; LOW THERMAL CONDUCTIVITY; NANO-METER SCALE; POWER CONSUMPTION; PROGRAMMING CURRENTS; ROOM TEMPERATURE; THERMAL BOUNDARY RESISTANCE;

PHASE INTERFACES; SEMICONDUCTING GERMANIUM COMPOUNDS; SYSTEM THEORY; THERMAL CONDUCTIVITY; THERMOANALYSIS;

PHASE CHANGE MEMORY;

EID: 67649211082     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3155202     Document Type: Article

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