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Volumn 64, Issue 3, 2010, Pages 317-319
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Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
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Author keywords
Composite materials; Electrical properties; Nanocomposites; Thin films
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Indexed keywords
COSPUTTERING;
CRYSTALLINE STATE;
DOPED FILMS;
ELECTRICAL PROPERTY;
HIGHER TEMPERATURES;
IN-PHASE;
NANOCOMPOSITES THIN FILMS;
PHASE CHANGE;
PHASE CHANGE RANDOM ACCESS MEMORY;
PZT;
PZT FILM;
RESET VOLTAGE;
ROOM TEMPERATURE;
UNIFORM SIZE;
BALL MILLING;
COMPOSITE MICROMECHANICS;
CRYSTALLINE MATERIALS;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
GERMANIUM;
MATERIALS PROPERTIES;
NANOCOMPOSITES;
PHASE CHANGE MEMORY;
PHASE SEPARATION;
PIEZOELECTRIC ACTUATORS;
PIEZOELECTRIC MATERIALS;
PIEZOELECTRIC TRANSDUCERS;
PULSE CODE MODULATION;
RANDOM ACCESS STORAGE;
SEMICONDUCTING LEAD COMPOUNDS;
SIZE SEPARATION;
SYSTEM THEORY;
TELLURIUM COMPOUNDS;
THIN FILMS;
COMPOSITE FILMS;
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EID: 72049086915
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matlet.2009.11.001 Document Type: Article |
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Times cited : (14)
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References (13)
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