Temperature influence on electrical properties of Sb-Te phase-change material

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 843-846

  Wang, Feng ^a,b   Zhang, Ting ^a   Song, Zhitang ^a   Liu, Chunliang ^b   Wu, Liangcai ^a   Liu, Bo ^a   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Hall measurement; In situ resistance measurement; Phase change material; Sb Te alloy

Indexed keywords

CRYSTALLIZATION; DROPS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; NANOCRYSTALLINE ALLOYS;

CARRIER DENSITIES; CONTINUOUS; CRYSTALLIZATION BEHAVIORS; CRYSTALLIZATION PROCESSES; CRYSTALLIZATION TEMPERATURES; ELECTRICAL PROPERTIES; HALL MEASUREMENT; HALL MEASUREMENTS; IN SITU RESISTANCE MEASUREMENT; IN SITU RESISTANCE MEASUREMENTS; PHASE-CHANGE MATERIAL; SB-TE ALLOY; STEEP DROPT; STOICHIOMETRIC COMPOSITIONS; TEMPERATURE DEPENDENTS; TEMPERATURE INFLUENCES; THERMAL STABILITIES;

TELLURIUM COMPOUNDS;

EID: 54249084612     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.843     Document Type: Article

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