Method for electrical characterization of nanowires

Nanotechnology

Volumn 22, Issue 43, 2011, Pages

  Gurwitz, Ron ^a   Shalish, Ilan ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CHANNEL MOBILITY; CHEMICAL PERTURBATIONS; CHEMICAL TREATMENTS; CRITICAL RADIUS; ELECTRICAL CHARACTERIZATION; FIELD EFFECTS; FULL DEPLETION; GALLIUM OXIDES; GAN NANOWIRES; HCL ETCH; PHOTO-VOLTAGE; SEMICONDUCTOR NANOSTRUCTURES; SIZE DEPENDENCE; SURFACE BAND BENDING; SURFACE PHOTOVOLTAGES; SURFACE STATE; SURFACE STATE DENSITY; TRANSMISSION ELECTRON MICROSCOPE; WIRE DIAMETER; X-RAY PHOTOELECTRONS;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HALL EFFECT; HALL MOBILITY; HETEROJUNCTIONS; NANOWIRES; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER MOBILITY;

EID: 80053539076     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/43/435705     Document Type: Article

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