SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 6, 2009, Pages 532-537

Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire

(9) Shalish, I a,b Seryogin, G a Yi, W a Bao, J M a,c Zimmler, M A a Likovich, E a Bell, D C a Capasso, F a Narayanamurti, V a

a HARVARD UNIVERSITY (United States)

b BEN GURION UNIVERSITY OF THE NEGEV (Israel)

c UNIVERSITY OF HOUSTON (United States)

Author keywords

Catalyst free; Epitaxial growth; InN; Nanorods; Nanowires; Ni; Sapphire

Indexed keywords

C-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; CATALYST-FREE; CATALYST-FREE GROWTH; EPITAXIAL RELATIONS; HYDRIDE VAPOR PHASE EPITAXY; INN; INN NANORODS; NI; NUCLEATION SITES; VAPOR-LIQUID-SOLID;

CATALYSIS; CATALYSTS; CORUNDUM; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRIC WIRE; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; NANORODS; NANOWIRES; NICKEL; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

EPITAXIAL GROWTH;

EID: 67649520137 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-009-9276-z Document Type: Article

Times cited : (17)

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