Control of ruthenium oxide nanorod length in reactive sputtering

Nanotechnology

Volumn 19, Issue 4, 2008, Pages

  Cross, Michael W ^a,c   Varhue, Walter J ^a   Hitt, Darren L ^a   Adams, Edward ^b  

^a University of Vermont   (United States)

^b IBM MICROELECTRONICS   (United States)

^c UNIVERSITY OF VERMONT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIO FREQUENCY SPUTTERING; RUTHENIUM OXIDE;

ELECTRON CYCLOTRON RESONANCE; NATURAL FREQUENCIES; REACTIVE SPUTTERING; RUTHENIUM COMPOUNDS; SILICON WAFERS;

NANORODS;

NANOROD; OXYGEN; RUTHENIUM DERIVATIVE; RUTHENIUM OXIDE; UNCLASSIFIED DRUG;

ARTICLE; DIFFUSION; PRIORITY JOURNAL; RADIOFREQUENCY; REACTOR; TEMPERATURE;

EID: 38049077878     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/04/045611     Document Type: Article

References (13)

1. Iijima S 1991 Nature 354 56
2. Norton D P, Heo Y W, Ivill M P, Ip K, Pearton S J, Chisholm M F and Steiner T 2004 Mater. Today 7 34
3. Hsieh C S and Tsai D S 2004 Appl. Phys. Lett. 85 3860
4. Hsieh C S, Wang G, Tsai D S, Chen R S and Huang Y S 2005 Nanotechnology 16 1885
5. Kim S, Koratkar N, Karabacak T and Lu T M 2006 Appl. Phys. Lett. 88 263106
6. Knapp M, Seitsonen A P, Kim Y D and Over H 2004 J. Phys. Chem. 108 14392
7. Lin Y T, Chen C Y, Hsiung C P, Cheng K W and Gan J Y 2006 Appl. Phys. Lett. 89 063123
8. Cheng K W, Lin Y T, Chen C Y, Hsiung C P, Gan J Y, Yeh J W, Hsieh C H and Chou L J 2006 Appl. Phys. Lett. 88 43115
9. Gatineau J, Yanagita K and Dussarrat C 2006 Microelectron. Eng. 83 2248
10. Bunt P and Varhue W J 2001 J. Electrochem. Soc. 147 4541-5
11. Wang G, Hsieh C S, Tsai D S, Chen R S and Huang Y S 2004 J. Mater. Chem. 14 3503
12. Carslaw H S and Jaeger J C 1986 Conduction of Heat in Solids 2/e (Oxford: Oxford University Press)
13. Gatineau J, Yanagita K and Dussarrat C 2006 Microelectron. Eng. 83 2248-52