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Volumn 97, Issue 15, 2010, Pages

Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

(13) Gay, G a Belhachemi, D a Colonna, J P a Minoret, S a Brianceau, P a Lafond, D c Baron, T b Molas, G a Jalaguier, E a Beaurain, A b Pelissier, B b Vidal, V a De Salvo, B a

a CEA LETI (France)

b CNRS (France)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DATA RETENTION; ELECTRICAL FIELD; HIGH DENSITY; IN-SITU; MEMORY WINDOW; NON-VOLATILE MEMORIES; TRAPPING LAYERS;

CHARGE TRAPPING; CHEMICAL VAPOR DEPOSITION; PASSIVATION; SILICON NITRIDE; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM NITRIDE;

EID: 77958110110 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3501129 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.