SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 3, 2010, Pages

High density Ni nanocrystals formed by coevaporating Ni and SiO2 pellets for the nonvolatile memory device application

(9) Hu, Chih Wei a Chang, Ting Chang b Tu, Chun Hao a Huang, Yu Hao c Lin, Chao Cheng a Chen, Min Chen b Huang, Fon Shan c Sze, Simon M a Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; DIELECTRIC LAYER; HIGH DENSITY; MEMORY DEVICE; MEMORY EFFECTS; MEMORY WINDOW; NANOCRYSTAL MEMORY DEVICES; NANOCRYSTAL STRUCTURES; NONVOLATILE MEMORY DEVICES; RELIABILITY CHARACTERISTICS;

NANOCRYSTALS; NONVOLATILE STORAGE; PELLETIZING; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 74849120799 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3271023 Document Type: Article

Times cited : (7)

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