Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications

Journal of Physics D: Applied Physics

Volumn 41, Issue 3, 2008, Pages

  Zhang, Min ^a   Chen, Wei ^a   Ding, Shi Jin ^a   Liu, Zhi Ying ^a   Huang, Yue ^a   Liao, Zhong Wei ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DEPOSITION; ELECTRIC PROPERTIES; OXIDATION; RUTHENIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MEMORY EFFECTS; VOLTAGE SHIFT;

NANOCRYSTALS;

EID: 43049097536     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/3/032007     Document Type: Article

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