High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Hsiao, Ching Lien ^a   Liu, Ting Wei ^a,c   Wu, Chien Ting ^a   Hsu, Hsu Cheng ^a   Hsu, Geng Ming ^a   Chen, Li Chyong ^a   Shiao, Wen Yu ^a   Yang, C C ^a   Gällström, Andreas ^b   Holtz, Per Olof ^b   Chen, Chia Chun ^c   Chen, Kuei Hsien ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Chemistry and Biology ^*  (Sweden)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; NITRIDATION; PHOTOLUMINESCENCE; SAPPHIRE; X RAY DIFFRACTION ANALYSIS; ZINC;

HIGH-PHASE-PURITY ZINC-BLENDE; ULTRATHIN CRYSTALLIZED INTERLAYER;

THIN FILMS;

EID: 41049098007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2898214     Document Type: Article

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